transistor(pnp) features z complementary to mmbt5551 z ideal for medium power amp lification and switching marking: 2l maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -160 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -160 v collector-emitter breakdown voltage v (br)ceo i c = -1ma, i b =0 -150 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb =-120 v , i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v , i c =0 -0.1 a h fe1 v ce = -5v, i c = -1ma 80 h fe2 v ce = -5v, i c =-10ma 100 300 dc current gain h fe3 v ce = -5v, i c =-50ma 50 collector-emitter saturation voltage v ce (sat) i c =-50 ma, i b = -5ma -0.5 v base-emitter saturation voltage v be (sat) i c = -50 ma, i b = -5ma -1 v transition frequency f t v ce = -5v, i c = -10ma f= 30mhz 100 mhz - so t -23 1. base 2. emitter 3. collector MMBT5401 1 date:2011/05 www.htsemi.com semiconductor jinyu
MMBT5401 2 date:2011/05 www.htsemi.com semiconductor jinyu
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